Context: Infineon and Innoscience are engaged in a multi-jurisdictional dispute over patents relevant to gallium nitride (GaN) semiconductor technology.
- Infineon has filed infringement complaints in the United States District Court for the District of Northern California, the United States International Trade Commission (ITC), and Germany’s Munich I Regional Court (Landgericht MĂĽnchen I) (June 16, 2024 ip fray article). The German court has granted Infineon injunctions (August 4, 2025 ip fray article).
- Innoscience sued Infineon for infringement of its own GaN patents in China’s Suzhou Intermediate People’s Court. Infineon tried to get the case moved to a venue of its preference, but this was rejected by the Supreme People’s Court.
- In December 2025, a final initial determination (FID) by ITC Administrative Law Judge (ALJ) Bryan F. Moore found a U.S. Tariff Act Section 337 violation in relation to one of two remaining patents in Infineon’s complaint, which Infineon alleges are infringed by imports of Innoscience products (December 4, 2025 ip fray article).
What’s new: The ITC has delivered its final decision and terminated its investigation, affirming—with modified reasoning—the infringement analysis put forward in the FID. It has found two claims of Infineon’s U.S. Patent No. 9,899,481 (“Electronic component and switch circuit”) infringed; though it also partially reversed the FID’s invalidity analysis, finding that Innoscience had proven several other claims of the ‘481 patent were invalid.
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Counsel
Infineon is represented by Turner Boyd Seraphine’s Karen I. Boyd and Megan Whyman Olesek; and Wolf Greenfield’s Gregory F. Corbett, Charles T. Steenburg, Bryan S. Conley, Jie Xiang, Samuel L. Doskocil, Libbie A. DiMarco, John W. McGrath, Eric J. Rutt, and Suresh S. Rav.
Innoscience is represented by Finnegan’s Sneha Nyshadham, Forrest A. Jones, and Lionel M. Lavenue.
